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Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) |
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IRF3000PBF | - | ![]() |
3125 | 0.00000000 | Infineon Technologies | HEXFET® | Tube | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | 8-SO | download | 1 (Unlimited) | REACH Unaffected | *IRF3000PBF | EAR99 | 8541.29.0095 | 95 | N-Channel | 300 V | 1.6A (Ta) | 10V | 400mOhm @ 960mA, 10V | 5V @ 250µA | 33 nC @ 10 V | ±30V | 730 pF @ 25 V | - | 2.5W (Ta) | |||
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IRF3709PBF | - | ![]() |
8735 | 0.00000000 | Infineon Technologies | HEXFET® | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220AB | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 30 V | 90A (Tc) | 4.5V, 10V | 9mOhm @ 15A, 10V | 3V @ 250µA | 41 nC @ 5 V | ±20V | 2672 pF @ 16 V | - | 3.1W (Ta), 120W (Tc) | |||
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IPD50R380CEATMA1 | - | ![]() |
3896 | 0.00000000 | Infineon Technologies | CoolMOS™ CE | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | IPD50R | MOSFET (Metal Oxide) | PG-TO252-3 | download | 3 (168 Hours) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 500 V | 14.1A (Tc) | 13V | 380mOhm @ 3.2A, 13V | 3.5V @ 260µA | 24.8 nC @ 10 V | ±20V | 584 pF @ 100 V | - | 98W (Tc) |
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