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Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Input | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Configuration | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | IGBT Type | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Vce(on) (Max) @ Vge, Ic | Current - Collector Cutoff (Max) | NTC Thermistor | Input Capacitance (Cies) @ Vce | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) |
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IPB80N04S2-H4ATMA2 | - | ![]() |
4726 | 0.00000000 | Infineon Technologies | CoolMOS™ | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | PG-TO263-3-2 | download | Not applicable | 1 (Unlimited) | REACH Affected | EAR99 | 8541.29.0095 | 1 | N-Channel | 40 V | 80A (Tc) | 10V | 3.7mOhm @ 80A, 10V | 4V @ 250µA | 148 nC @ 10 V | ±20V | 4400 pF @ 25 V | - | 300W (Tc) | |||||||||||||||||||
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IPB70N04S406 | - | ![]() |
1202 | 0.00000000 | Infineon Technologies | CoolMOS™ | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | PG-TO263-3-2 | download | Not applicable | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | N-Channel | 40 V | 70A (Tc) | 10V | 6.2mOhm @ 70A, 10V | 4V @ 26µA | 32 nC @ 10 V | ±20V | 2550 pF @ 25 V | - | 58W (Tc) | |||||||||||||||||||
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IPB22N03S4L-15ATMA1 | - | ![]() |
6832 | 0.00000000 | Infineon Technologies | OptiMOS™ | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | PG-TO263-3-2 | download | Not applicable | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 30 V | 22A (Tc) | 4.5V, 10V | 14.6mOhm @ 22A, 10V | 2.2V @ 10µA | 14 nC @ 10 V | ±16V | 980 pF @ 25 V | - | 31W (Tc) | |||||||||||||||||||
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NTE2389 | 7.6700 | ![]() |
282 | 0.00000000 | NTE Electronics, Inc | - | Bag | Active | 175°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 2368-NTE2389 | EAR99 | 8541.29.0095 | 1 | N-Channel | 60 V | 35A (Ta) | 10V | 45mOhm @ 20A, 10V | 4V @ 1mA | 30V | 2000 pF @ 25 V | - | 125W (Ta) | |||||||||||||||||||||
FDW262P | 0.5700 | ![]() |
178 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | MOSFET (Metal Oxide) | 8-TSSOP | download | ROHS3 Compliant | EAR99 | 8541.21.0095 | 2,500 | P-Channel | 20 V | 4.5A (Ta) | 1.8V, 4.5V | 47mOhm @ 4.5A, 4.5V | 1.5V @ 250µA | 18 nC @ 4.5 V | ±8V | 1193 pF @ 10 V | - | 1.3W (Ta) | ||||||||||||||||||||||
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FQI4N80TU | 1.0500 | ![]() |
2 | 0.00000000 | Fairchild Semiconductor | QFET® | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | I2PAK (TO-262) | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 800 V | 3.9A (Tc) | 10V | 3.6Ohm @ 1.95A, 10V | 5V @ 250µA | 25 nC @ 10 V | ±30V | 880 pF @ 25 V | - | 3.13W (Ta), 130W (Tc) | ||||||||||||||||||||||
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APTGT150A170D1G | - | ![]() |
8558 | 0.00000000 | Microsemi Corporation | - | Bulk | Discontinued at SIC | - | Chassis Mount | D1 | 780 W | Standard | D1 | - | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1 | Half Bridge | Trench Field Stop | 1700 V | 280 A | 2.4V @ 15V, 150A | 4 mA | No | 13 nF @ 25 V | ||||||||||||||||||||||
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IRFM220BTF_FP001 | - | ![]() |
5086 | 0.00000000 | onsemi | - | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | IRFM2 | MOSFET (Metal Oxide) | SOT-223-4 | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 4,000 | N-Channel | 200 V | 1.13A (Tc) | 10V | 800mOhm @ 570mA, 10V | 4V @ 250µA | 16 nC @ 10 V | ±30V | 390 pF @ 25 V | - | 2.4W (Ta) | |||||||||||||||||||
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PUMB3HF | - | ![]() |
8477 | 0.00000000 | Nexperia USA Inc. | - | Bulk | Obsolete | Surface Mount | 6-TSSOP, SC-88, SOT-363 | PUMB3 | 240mW | 6-TSSOP | download | ROHS3 Compliant | 1 (Unlimited) | 1727-PUMB3HF | OBSOLETE | 1 | 50V | 100mA | 100nA | 2 PNP Pre-Biased (Dual) | 100mV @ 500µA, 10mA | 200 @ 1mA, 5V | 180MHz | 4.7kOhms | - | ||||||||||||||||||||||
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DMN2990UFB-7B | 0.3600 | ![]() |
10 | 0.00000000 | Diodes Incorporated | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 3-UFDFN | DMN2990 | MOSFET (Metal Oxide) | X1-DFN1006-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.21.0095 | 10,000 | N-Channel | 20 V | 780mA (Ta) | 1.8V, 4.5V | 990mOhm @ 100mA, 4.5V | 1V @ 250A | 0.41 nC @ 4.5 V | ±8V | 31 pF @ 15 V | - | 520mW (Ta) | ||||||||||||||||||
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SQJ401EP-T2_GE3 | 0.9356 | ![]() |
3922 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | SQJ401 | MOSFET (Metal Oxide) | PowerPAK® SO-8 | download | ROHS3 Compliant | 1 (Unlimited) | 742-SQJ401EP-T2_GE3TR | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 12 V | 32A (Tc) | 2.5V, 4.5V | 6mOhm @ 15A, 4.5V | 1.5V @ 250µA | 164 nC @ 4.5 V | ±8V | 10015 pF @ 6 V | - | 83W (Tc) | ||||||||||||||||||
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IXTH60N30T | - | ![]() |
9046 | 0.00000000 | IXYS | Trench | Tube | Active | - | Through Hole | TO-247-3 | IXTH60 | MOSFET (Metal Oxide) | TO-247 (IXTH) | - | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 30 | N-Channel | 300 V | 60A (Tc) | - | - | - | - | ||||||||||||||||||||||
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MWI75-06A7T | - | ![]() |
5130 | 0.00000000 | IXYS | - | Box | Obsolete | -40°C ~ 150°C (TJ) | Chassis Mount | E2 | MWI75 | 280 W | Standard | E2 | - | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 6 | Three Phase Inverter | NPT | 600 V | 90 A | 2.6V @ 15V, 75A | 1.3 mA | Yes | 3.2 nF @ 25 V | ||||||||||||||||||||
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BCX52,115 | 0.0700 | ![]() |
17 | 0.00000000 | NXP USA Inc. | * | Bulk | Active | BCX52 | - | ROHS3 Compliant | REACH Unaffected | EAR99 | 8541.29.0075 | 1,000 | |||||||||||||||||||||||||||||||||||
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TK30A06N1,S4X | 0.9300 | ![]() |
4866 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK30A06 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 60 V | 30A (Tc) | 10V | 15mOhm @ 15A, 10V | 4V @ 200µA | 16 nC @ 10 V | ±20V | 1050 pF @ 30 V | - | 25W (Tc) | |||||||||||||||||||
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FQB32N12V2TM | - | ![]() |
1365 | 0.00000000 | onsemi | QFET® | Tape & Reel (TR) | Obsolete | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | FQB3 | MOSFET (Metal Oxide) | D²PAK (TO-263) | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 800 | N-Channel | 120 V | 32A (Tc) | 10V | 50mOhm @ 16A, 10V | 4V @ 250µA | 53 nC @ 10 V | ±30V | 1860 pF @ 25 V | - | 3.75W (Ta), 150W (Tc) | |||||||||||||||||||
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IRL3716PBF | - | ![]() |
3211 | 0.00000000 | Infineon Technologies | HEXFET® | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220AB | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 20 V | 180A (Tc) | 4.5V, 10V | 4mOhm @ 90A, 10V | 3V @ 250µA | 79 nC @ 4.5 V | ±20V | 5090 pF @ 10 V | - | 210W (Tc) | ||||||||||||||||||||
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SSM3J306T(TE85L,F) | - | ![]() |
5083 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SSM3J306 | MOSFET (Metal Oxide) | TSM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | P-Channel | 30 V | 2.4A (Ta) | 4V, 10V | 117mOhm @ 1A, 10V | - | 2.5 nC @ 15 V | ±20V | 280 pF @ 15 V | - | 700mW (Ta) | ||||||||||||||||||||
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IRF6638TR1PBF | - | ![]() |
1555 | 0.00000000 | Infineon Technologies | HEXFET® | Tape & Reel (TR) | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MX | MOSFET (Metal Oxide) | DIRECTFET™ MX | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 30 V | 25A (Ta), 140A (Tc) | 4.5V, 10V | 2.9mOhm @ 25A, 10V | 2.35V @ 100µA | 45 nC @ 4.5 V | ±20V | 3770 pF @ 15 V | - | 2.8W (Ta), 89W (Tc) | ||||||||||||||||||||
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NTH4L045N065SC1 | 15.3100 | ![]() |
540 | 0.00000000 | onsemi | - | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | SiCFET (Silicon Carbide) | TO-247-4L | download | ROHS3 Compliant | Not Applicable | REACH Unaffected | EAR99 | 8541.29.0095 | 30 | N-Channel | 650 V | 55A (Tc) | 15V, 18V | 50mOhm @ 25A, 18V | 4.3V @ 8mA | 105 nC @ 18 V | +22V, -8V | 1870 pF @ 325 V | - | 187W (Tc) | |||||||||||||||||||
NTD600N80S3Z | 2.3800 | ![]() |
65 | 0.00000000 | onsemi | SuperFET® III | Tape & Reel (TR) | Not For New Designs | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | D-PAK (TO-252) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 800 V | 8A (Tj) | 10V | 600mOhm @ 4A, 10V | 3.8V @ 180µA | 15.5 nC @ 10 V | ±20V | 725 pF @ 400 V | - | 60W (Tc) | ||||||||||||||||||||
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BUK9510-100B,127 | 0.7700 | ![]() |
10 | 0.00000000 | NXP USA Inc. | * | Tube | Active | BUK95 | download | ROHS3 Compliant | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | |||||||||||||||||||||||||||||||||||
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IPP80R900P7 | - | ![]() |
2125 | 0.00000000 | Infineon Technologies | - | Bulk | Active | download | 0000.00.0000 | 1 | |||||||||||||||||||||||||||||||||||||||
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BUK9675-100A,118 | - | ![]() |
6750 | 0.00000000 | NXP Semiconductors | Automotive, AEC-Q101, TrenchMOS™ | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D2PAK | download | 1 (Unlimited) | REACH Unaffected | 2156-BUK9675-100A,118-954 | 1 | N-Channel | 100 V | 23A (Tc) | 5V, 10V | 72mOhm @ 10A, 10V | 2V @ 1mA | ±15V | 1704 pF @ 25 V | - | 99W (Tc) | ||||||||||||||||||||||
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SPP15P10P H | - | ![]() |
5099 | 0.00000000 | Infineon Technologies | Automotive, AEC-Q101, SIPMOS® | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | PG-TO220-3-1 | download | Not applicable | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | P-Channel | 100 V | 15A (Tc) | 10V | 240mOhm @ 10.6A, 10V | 2.1V @ 1.54mA | 48 nC @ 10 V | ±20V | 1280 pF @ 25 V | - | 128W (Tc) | |||||||||||||||||||
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2SJ645-TL-E | - | ![]() |
4100 | 0.00000000 | Sanyo | - | Bulk | Obsolete | 150°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | TP-FA | - | RoHS non-compliant | Vendor Undefined | 2156-2SJ645-TL-E-600057 | 1 | P-Channel | 20 V | 8A (Ta) | 2.5V, 4.5V | 58mOhm @ 3A, 4.5V | 1.4V @ 1mA | 8.7 nC @ 4.5 V | ±10V | 680 pF @ 10 V | - | 1W (Ta), 20W (Tc) | |||||||||||||||||||||
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FQI7N80TU | - | ![]() |
1520 | 0.00000000 | Fairchild Semiconductor | QFET® | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | I2PAK (TO-262) | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 800 V | 6.6A (Tc) | 10V | 1.5Ohm @ 3.3A, 10V | 5V @ 250µA | 52 nC @ 10 V | ±30V | 1850 pF @ 25 V | - | 3.13W (Ta), 167W (Tc) | ||||||||||||||||||||||
FCPF360N65S3R0L-F154 | 2.9900 | ![]() |
5901 | 0.00000000 | onsemi | SuperFET® III | Tube | Not For New Designs | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | FCPF360 | MOSFET (Metal Oxide) | TO-220F-3 | download | ROHS3 Compliant | Not Applicable | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 10A (Tj) | 10V | 360mOhm @ 5A, 10V | 4.5V @ 200µA | 18 nC @ 10 V | ±30V | 730 pF @ 400 V | - | 27W (Tc) | |||||||||||||||||||
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PJP10NA65_T0_00001 | - | ![]() |
9994 | 0.00000000 | Panjit International Inc. | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PJP10 | MOSFET (Metal Oxide) | TO-220AB | - | ROHS3 Compliant | 1 (Unlimited) | 3757-PJP10NA65_T0_00001 | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 10A (Ta) | 10V | 1Ohm @ 5A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±30V | 1200 pF @ 25 V | - | 156W (Tc) | ||||||||||||||||||
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BTS114A E3045A | 3.2200 | ![]() |
4 | 0.00000000 | Infineon Technologies | TEMPFET® | Bulk | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | PG-TO220-3-5 | download | Not applicable | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 50 V | 17A (Tc) | 10V | 100mOhm @ 9A, 10V | 3.5V @ 1mA | ±20V | 600 pF @ 25 V | - | 50W |
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