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Transistors(100539)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Input Type | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | FET Type | Test Condition | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Reverse Recovery Time (trr) | IGBT Type | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Pulsed (Icm) | Vce(on) (Max) @ Vge, Ic | Switching Energy | Gate Charge | Td (on/off) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SIGC25T60UNX1SA2 | - |  |
3512 | 0.00000000 | Infineon Technologies | - | Bulk | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | Die | SIGC25 | Standard | Die | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | OBSOLETE | 1 | 400V, 30A, 1.8Ohm, 15V | NPT | 600 V | 30 A | 90 A | 3.15V @ 15V, 30A | - | 16ns/122ns | ||||||||||||||||||
 |
TPN5R203PL,LQ | 0.6400 | |
9 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | TPN5R203 | MOSFET (Metal Oxide) | 8-TSON Advance (3.1x3.1) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 38A (Tc) | 4.5V, 10V | 5.2mOhm @ 19A, 10V | 2.1V @ 200µA | 22 nC @ 10 V | ±20V | 1975 pF @ 15 V | - | 610mW (Ta), 61W (Tc) | ||||||||||||||||
 |
TK28N65W5,S1F | 6.6700 | |
1 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C | Through Hole | TO-247-3 | TK28N65 | MOSFET (Metal Oxide) | TO-247 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 650 V | 27.6A (Ta) | 10V | 130mOhm @ 13.8A, 10V | 4.5V @ 1.6mA | 90 nC @ 10 V | ±30V | 3000 pF @ 300 V | - | 230W (Tc) | |||||||||||||||
 |
TPWR6003PL,L1Q | 3.0600 | |
458 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerWDFN | TPWR6003 | MOSFET (Metal Oxide) | 8-DSOP Advance | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 30 V | 150A (Tc) | 4.5V, 10V | 0.6mOhm @ 50A, 10V | 2.1V @ 1mA | 110 nC @ 10 V | ±20V | 10000 pF @ 15 V | - | 960mW (Ta), 170W (Tc) | ||||||||||||||||
 |
NTB35N15T4G | - | |
6173 | 0.00000000 | onsemi | - | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | NTB35 | MOSFET (Metal Oxide) | D²PAK | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 800 | N-Channel | 150 V | 37A (Ta) | 10V | 50mOhm @ 18.5A, 10V | 4V @ 250µA | 100 nC @ 10 V | ±20V | 3200 pF @ 25 V | - | 2W (Ta), 178W (Tj) | ||||||||||||||
 |
NTMFS4934NT3G | - | |
1900 | 0.00000000 | onsemi | - | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN, 5 Leads | NTMFS4 | MOSFET (Metal Oxide) | 5-DFN (5x6) (8-SOFL) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 30 V | 17.1A (Ta), 147A (Tc) | 4.5V, 10V | 2mOhm @ 30A, 10V | 2.2V @ 250µA | 34 nC @ 4.5 V | ±20V | 5505 pF @ 15 V | - | 930mW (Ta), 69.44W (Tc) | ||||||||||||||
|
NTMFS4841NT1G | - | |
1312 | 0.00000000 | onsemi | - | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN, 5 Leads | NTMFS4 | MOSFET (Metal Oxide) | 5-DFN (5x6) (8-SOFL) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,500 | N-Channel | 30 V | 8.3A (Ta), 57A (Tc) | 4.5V, 10V | 7mOhm @ 30A, 10V | 2.5V @ 250µA | 17 nC @ 4.5 V | ±20V | 1436 pF @ 12 V | - | 870mW (Ta), 41.7W (Tc) | ||||||||||||||
|
UPA2324T1P-E1-A#YK1 | - | |
2492 | 0.00000000 | Renesas Electronics America Inc | * | Tray | Obsolete | UPA2324 | - | - | 559-UPA2324T1P-E1-A#YK1 | OBSOLETE | 1 | - | |||||||||||||||||||||||||||||||
|
RJK0456DPB-WS#J5 | - | |
8779 | 0.00000000 | Renesas Electronics America Inc | * | Tray | Obsolete | download | 559-RJK0456DPB-WS#J5 | OBSOLETE | 1 | ||||||||||||||||||||||||||||||||||
 |
STGF20H65DFB2 | 2.5200 | |
8986 | 0.00000000 | STMicroelectronics | HB2 | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | STGF20 | Standard | 45 W | TO-220FP | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 497-STGF20H65DFB2 | EAR99 | 8541.29.0095 | 50 | 400V, 20A, 10Ohm, 15V | 215 ns | Trench Field Stop | 650 V | 40 A | 60 A | 2.1V @ 15V, 20A | 265µJ (on), 214µJ (off) | 56 nC | 16ns/78.8ns | |||||||||||||
 |
STGW75H65DFB2-4 | 8.2500 | |
54 | 0.00000000 | STMicroelectronics | HB2 | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | STGW75 | Standard | 357 W | TO-247-4 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 497-STGW75H65DFB2-4 | EAR99 | 8541.29.0095 | 30 | 400V, 75A, 10Ohm, 15V | 88 ns | Trench Field Stop | 650 V | 115 A | 225 A | 2V @ 15V, 75A | 992µJ (on), 766µJ (off) | 207 nC | 22ns/121ns | |||||||||||||
 |
2N7002A | - | |
7776 | 0.00000000 | Diotec Semiconductor | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 2N7002 | MOSFET (Metal Oxide) | SOT-23-3 (TO-236) | download | ROHS3 Compliant | 1 (Unlimited) | 2796-2N7002ATR | 8541.21.0000 | 3,000 | N-Channel | 60 V | 280mA (Ta) | 5V, 10V | 2Ohm @ 500mA, 10V | 2.5V @ 250µA | ±30V | 50 pF @ 25 V | - | 350mW (Ta) | ||||||||||||||||
 |
G3R75MT12J | 11.0300 | |
9581 | 0.00000000 | GeneSiC Semiconductor | G3R™ | Tube | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | G3R75 | SiCFET (Silicon Carbide) | TO-263-7 | download | RoHS Compliant | 1 (Unlimited) | 1242-G3R75MT12J | EAR99 | 8541.29.0095 | 50 | N-Channel | 1200 V | 42A (Tc) | 15V | 90mOhm @ 20A, 15V | 2.69V @ 7.5mA | 54 nC @ 15 V | ±15V | 1560 pF @ 800 V | - | 224W (Tc) | ||||||||||||||
 |
SCTWA35N65G2V | 18.6800 | |
5585 | 0.00000000 | STMicroelectronics | - | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | SCTWA35 | SiCFET (Silicon Carbide) | TO-247 Long Leads | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 497-SCTWA35N65G2V | EAR99 | 8541.29.0095 | 30 | N-Channel | 650 V | 45A (Tc) | 18V, 20V | 72mOhm @ 20A, 20V | 3.2V @ 1mA | 73 nC @ 20 V | +20V, -5V | 73000 pF @ 400 V | - | 208W (Tc) | |||||||||||||
 |
RM120N60T2 | 0.5500 | |
2318 | 0.00000000 | Rectron USA | - | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220-3 | download | ROHS3 Compliant | 1 (Unlimited) | 2516-RM120N60T2 | 8541.10.0080 | 5,000 | N-Channel | 60 V | 120A (Tc) | 4.5V, 10V | 4mOhm @ 60A, 10V | 2.4V @ 250µA | ±20V | 4000 pF @ 30 V | - | 180W (Tc) | |||||||||||||||||
|
RM21N650T2 | 1.2500 | |
7279 | 0.00000000 | Rectron USA | - | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220-3 | download | ROHS3 Compliant | 1 (Unlimited) | 2516-RM21N650T2 | 8541.10.0080 | 5,000 | N-Channel | 650 V | 21A (Tc) | 10V | 180mOhm @ 10.5A, 10V | 4V @ 250µA | ±30V | 2600 pF @ 50 V | - | 188W (Tc) | |||||||||||||||||
 |
RM50N200HD | 1.2200 | |
3890 | 0.00000000 | Rectron USA | - | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | TO-263-2 | download | ROHS3 Compliant | 1 (Unlimited) | 2516-RM50N200HDTR | 8541.10.0080 | 8,000 | N-Channel | 200 V | 51A (Tc) | 10V | 32mOhm @ 10A, 10V | 4V @ 250µA | ±20V | 1598 pF @ 100 V | - | 214W (Tc) | |||||||||||||||||
 |
STGWA100H65DFB2 | 7.1900 | |
4773 | 0.00000000 | STMicroelectronics | HB2 | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | STGWA100 | Standard | 441 W | TO-247 Long Leads | download | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 497-STGWA100H65DFB2 | EAR99 | 8541.29.0095 | 30 | 400V, 100A, 2.2Ohm, 15V | 123 ns | Trench Field Stop | 650 V | 145 A | 300 A | 2V @ 15V, 100A | 2.2mJ (on), 1.4mJ (off) | 288 nC | 30ns/130ns | |||||||||||||
 |
FX50SMJ-2#B00 | 8.2700 | |
6 | 0.00000000 | Renesas Electronics America Inc | * | Bulk | Active | FX50SMJ | - | - | Not applicable | 1 (Unlimited) | Vendor Undefined | EAR99 | 8542.39.0001 | 1 | - | ||||||||||||||||||||||||||||
 |
2SK2110-T1-AZ | - | |
4674 | 0.00000000 | Renesas Electronics America Inc | * | Bulk | Active | 2SK2110 | - | download | Not applicable | 1 (Unlimited) | Vendor Undefined | EAR99 | 0000.00.0000 | 1 | - | ||||||||||||||||||||||||||||
|
RFH75N05 | 4.1100 | |
80 | 0.00000000 | Harris Corporation | - | Bulk | Active | - | Through Hole | TO-218-3 Isolated Tab, TO-218AC | MOSFET (Metal Oxide) | TO-218 Isolated | download | Not applicable | 1 (Unlimited) | Vendor Undefined | EAR99 | 8541.29.0095 | 80 | N-Channel | 50 V | - | - | - | - | - | - | - | |||||||||||||||||
 |
HGTP3N60B3 | 0.5200 | |
2 | 0.00000000 | Harris Corporation | - | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | Standard | 33.3 W | TO-220 | download | RoHS non-compliant | 3 (168 Hours) | Vendor Undefined | EAR99 | 0000.00.0000 | 1 | 480V, 3.5A, 82Ohm, 15V | 16 ns | - | 600 V | 7 A | 20 A | 2.1V @ 15V, 3.5A | 66µJ (on), 88µJ (off) | 21 nC | 18ns/105ns | |||||||||||||||
 |
IPP120N04S3-02 | 3.2000 | |
30 | 0.00000000 | Infineon Technologies | OptiMOS® | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | PG-TO220-3-1 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 0000.00.0000 | 1 | N-Channel | 40 V | 120A (Tc) | 10V | 2.3mOhm @ 80A, 10V | 4V @ 230µA | 210 nC @ 10 V | ±20V | 14300 pF @ 25 V | - | 300W (Tc) | |||||||||||||||
 |
IRFZ44NSTRRPBF | 0.7900 | |
450 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D2PAK | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 0000.00.0000 | 450 | N-Channel | 55 V | 49A (Tc) | 10V | 17.5mOhm @ 25A, 10V | 4V @ 250µA | 63 nC @ 10 V | ±20V | 1470 pF @ 25 V | - | 3.8W (Ta), 94W (Tc) | |||||||||||||||
 |
IRF7807VPBF | 1.0000 | |
2076 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | 8-SO | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 0000.00.0000 | 1 | N-Channel | 30 V | 8.3A (Ta) | 4.5V | 25mOhm @ 7A, 4.5V | 3V @ 250µA | 14 nC @ 5 V | ±20V | - | 2.5W (Ta) | ||||||||||||||||
|
MCH6437-P-TL-E | - | |
6630 | 0.00000000 | Fairchild Semiconductor | - | Bulk | Active | - | Surface Mount | 6-SMD, Flat Leads | MCH64 | - | 6-MCPH | - | Not applicable | 1 (Unlimited) | Vendor Undefined | 998 | - | 7A (Tj) | - | - | - | - | |||||||||||||||||||||
 |
IRGP35B60PDPBF | - | |
9966 | 0.00000000 | International Rectifier | - | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | Standard | 308 W | TO-247AC | download | Not applicable | 1 (Unlimited) | REACH Unaffected | EAR99 | 0000.00.0000 | 1 | 390V, 22A, 3.3Ohm, 15V | 42 ns | NPT | 600 V | 60 A | 120 A | 2.55V @ 15V, 35A | 220µJ (on), 215µJ (off) | 240 nC | 26ns/110ns | |||||||||||||||
|
AUIRFR3710ZTRL | - | |
8408 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | D-Pak | download | Not applicable | 1 (Unlimited) | REACH Unaffected | EAR99 | 0000.00.0000 | 1 | N-Channel | 100 V | 42A (Tc) | 18mOhm @ 33A, 10V | 4V @ 250µA | 100 nC @ 10 V | 2930 pF @ 25 V | - | 140W (Tc) | |||||||||||||||||
 |
NTMFS4936NCT1G | 0.3300 | |
15 | 0.00000000 | Fairchild Semiconductor | - | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN, 5 Leads | NTMFS4936 | MOSFET (Metal Oxide) | 5-DFN (5x6) (8-SOFL) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Affected | EAR99 | 8541.29.0095 | 1,500 | N-Channel | 30 V | 11.6A (Ta), 79A (Tc) | 4.5V, 10V | 3.8mOhm @ 30A, 10V | 2.2V @ 250µA | 43 nC @ 10 V | ±20V | 3044 pF @ 15 V | - | 920mW (Ta), 43W (Tc) | ||||||||||||||
 |
R6035KNZ1C9 | - | |
6824 | 0.00000000 | Rohm Semiconductor | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | R6035 | MOSFET (Metal Oxide) | TO-247 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 30 | N-Channel | 600 V | 35A (Tc) | 10V | 102mOhm @ 18.1A, 10V | 5V @ 1mA | 72 nC @ 10 V | ±20V | 3000 pF @ 25 V | - | 379W (Tc) |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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